Novel Nickel Silicide Contact Technology Using Selenium Segregation for SOI N-FETs With Silicon–Carbon Source/Drain Stressors

✍ Scribed by H. Wong; F. Liu; K. Ang; G. Samudra; Y. Yeo

• Book ID: 126748291
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 421 KB
• Volume: 29
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2008.2000716