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Contact Resistance Reduction Technology Using Aluminum Implant and Segregation for Strained p-FinFETs With Silicon–Germanium Source/Drain

✍ Scribed by Sinha, M.; Lee, R.T.P.; Eng Fong Chor; Yee-Chia Yeo

Book ID
114619978
Publisher
IEEE
Year
2010
Tongue
English
Weight
938 KB
Volume
57
Category
Article
ISSN
0018-9383

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