N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

✍ Scribed by Tsung-Yang Liow; Kian-Ming Tan; Lee, R.T.P.; Chih-Hang Tung; Samudra, G.S.; Balasubramanian, N.; Yee-Chia Yeo

• Book ID: 118059713
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 281 KB
• Volume: 28
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2007.908495