Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs

✍ Scribed by Hock-chun Chin; Xiao Gong; Xinke Liu; Yee-chia Yeo

• Book ID: 126731408
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 239 KB
• Volume: 30
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2009.2024649