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Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth

✍ Scribed by Lee, Sanghoon; Law, Jeremy J. M.; Carter, Andrew D.; Thibeault, Brian J.; Mitchell, William; Chobpattana, Varistha; Kramer, Stephan; Stemmer, Susanne; Gossard, Arthur C.; Rodwell, Mark J. W.

Book ID: 121311374
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 646 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2215572

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