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RF and Logic Performance Improvement of $ \hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Composite-Channel HEMT Using Gate-Sinking Technology

✍ Scribed by Chien-I Kuo, ; Heng-Tung Hsu, ; Chang, E.Y.; Chia-Yuan Chang, ; Miyamoto, Y.; Datta, S.; Radosavljevic, M.; Guo-Wei Huang, ; Ching-Ting Lee,

Book ID: 125535547
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 371 KB
Volume: 29
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2008.917933

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