[IEEE 2013 25th International Conference
โฆ LIBER โฆ
[IEEE 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan (2013.05.19-2013.05.23)] 2013 International Conference on Indium Phosphide and Related Materials (IPRM) - High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching
โ Scribed by Lee, Sanghoon; Huang, Cheng-Ying; Carter, Andrew D.; Law, Jeremy J. M.; Elias, Doron C.; Chobpattana, Varistha; Thibeault, Brian J.; Mitchell, William; Stemmer, Susanne; Gossard, Arthur C.; Rodwell, Mark J. W.
- Book ID
- 124077261
- Publisher
- IEEE
- Year
- 2013
- Weight
- 494 KB
- Category
- Article
- ISBN
- 1467361313
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