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Strain relaxation of pseudomorphic Si1−xGex/Si(1 0 0) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication

✍ Scribed by B. Holländer; St. Lenk; S. Mantl; H. Trinkaus; D. Kirch; M. Luysberg; T. Hackbarth; H.-J. Herzog; P.F.P. Fichtner

No coin nor oath required. For personal study only.

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Strain relaxation of pseudomorphic Si1−xGex/Si(1&#xa0;0&#xa0;0) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication