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Strain relaxation of AlxGa1−xN epitaxial layers on GaN and SiC substrates

✍ Scribed by J Domagala; M Leszczynski; P Prystawko; T Suski; R Langer; A Barski; M Bremser


Book ID
117625268
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
171 KB
Volume
286
Category
Article
ISSN
0925-8388

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Improvement of breakdown characteristics
✍ Yu, Hongbo ;Lisesivdin, Sefer B. ;Bolukbas, Basar ;Kelekci, Ozgur ;Ozturk, Musta 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 381 KB

## Abstract To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al~__x__~Ga~1−__x__~N double heterostructure (DH‐HEMTs) were designed and fabricated by replacing the semi‐insulating GaN buffer with content