𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical investigation of AlxGa1−xN epitaxial films grown on AlN buffer layers

✍ Scribed by Teofilov, N.; Thonke, K.; Sauer, R.; Kirste, L.; Ebling, D.G.; Benz, K.W.

Book ID
122655781
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
83 KB
Volume
11
Category
Article
ISSN
0925-9635

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural properties of semipolar AlxGa
Structural properties of semipolar AlxGa1−xN($1\bar {1}03$) films grown on ZnO substrates using room temperature epitaxial buffer layers
✍ Ueno, Kohei ;Kobayashi, Atsushi ;Ohta, Jitsuo ;Fujioka, Hiroshi 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 251 KB

## Abstract $1\bar {1}03$We have grown Al~__x__~Ga~1−__x__~N films on semipolar ZnO ($1\bar {1}03$) substrates by pulsed laser deposition (PLD). The direct growth of Al~0.25~Ga~0.75~N on ZnO ($1\bar {1}03$) substrates at 850 °C results in the formation of __c__‐axis oriented materials with poor cry

Improvement of breakdown characteristics
Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer
✍ Yu, Hongbo ;Lisesivdin, Sefer B. ;Bolukbas, Basar ;Kelekci, Ozgur ;Ozturk, Musta 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 381 KB

## Abstract To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al~__x__~Ga~1−__x__~N double heterostructure (DH‐HEMTs) were designed and fabricated by replacing the semi‐insulating GaN buffer with content