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Lateral growth of AlxGa1–xN and GaN on SiC substrates patterned by photo-electrochemical etching

✍ Scribed by Rossów, U.; Riedel, N.; Hitzel, F.; Riedl, T.; Hangleiter, A.


Book ID
115533765
Publisher
Cambridge University Press
Year
2002
Weight
356 KB
Volume
743
Category
Article
ISSN
0272-9172

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## Abstract We report on the self organized growth of GaN quantum dots deposited on Al~__x__~ Ga~1–__x__~ N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al~__x__~ Ga~1–__x__~ N layer on AlN depends on Al composition and thickness. The measurement of the variat