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[IEEE 2010 International Conference on Enabling Science and Nanotechnology (ESciNano) - Kuala Lumpur, Malaysia (2010.12.1-2010.12.3)] 2010 International Conference on Enabling Science and Nanotechnology (ESciNano) - Growth of GaN on SiC/Si substrates using AlN buffer layer under low III/V source gas ratio by hot-mesh CVD

✍ Scribed by Nagata, Kazuki; Tamura, Kazuyuki; Suemitsu, Maki; Narita, Yuzuru; Ito, Takashi; Endoh, Tetsuo; Nakazawa, Hideki; Hashim, Abdul Manaf; Yasui, Kanji

Book ID: 126870176
Publisher: IEEE
Year: 2010
Weight: 392 KB
Category: Article
ISBN: 1424488532
DOI: 10.1109/escinano.2010.5701027

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