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Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures

✍ Scribed by Eickhoff, M.; Ambacher, O.; Krotz, G.; Stutzmann, M.

Book ID: 111682892
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 353 KB
Volume: 90
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1398602

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## Abstract To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al~__x__~Ga~1−__x__~N double heterostructure (DH‐HEMTs) were designed and fabricated by replacing the semi‐insulating GaN buffer with content