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Preparation of AlxGa1-xN/GaN heterostructure by MOVPE

โœ Scribed by Kenji Ito; Kazumasa Hiramatsu; Hiroshi Amano; Isamu Akasaki


Book ID
103164276
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
851 KB
Volume
104
Category
Article
ISSN
0022-0248

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โœ M. Kalafi; A. Asgari ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 187 KB

The behavior of two-dimensional electron gas density, induced by spontaneous and piezoelectric polarization, in non-intentionally doped GaN=AlxGa1-xN=GaN heterostructures with very thin barriers has been studied. The sheet carrier concentration, Ns, induced by polarization charges was determined sel