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Photoluminescence and persistent photoconductivity of AlxGa1-xN/GaN heterostructures

โœ Scribed by S.J. Chung; B. Karunagaran; S. Velumani; C.-H. Hong; H.J. Lee; E.-K. Suh


Book ID
106020365
Publisher
Springer
Year
2006
Tongue
English
Weight
474 KB
Volume
86
Category
Article
ISSN
1432-0630

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The behavior of two-dimensional electron gas density, induced by spontaneous and piezoelectric polarization, in non-intentionally doped GaN=AlxGa1-xN=GaN heterostructures with very thin barriers has been studied. The sheet carrier concentration, Ns, induced by polarization charges was determined sel