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Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content

✍ Scribed by Kohler, K.; Muller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V.; Lim, T.; Kirste, L.; Menner, H. P.; Bruckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R.

Book ID: 111682908
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 465 KB
Volume: 109
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3553866

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