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Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates

✍ Scribed by T Egawa; A Sakai; T Yamamoto; N Taoka; O Nakatsuka; S Zaima; Y Yasuda

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 242 KB
Volume: 224
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2003.08.072

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