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Strain and scattering related spectral output of 13-μm InGaAsP semiconductor diode lasers

✍ Scribed by Peters, Frank H. ;Cassidy, Daniel T.

Book ID
115341386
Publisher
The Optical Society
Year
1991
Tongue
English
Weight
724 KB
Volume
30
Category
Article
ISSN
1559-128X

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We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.