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Nonlinear gain and the spectral output of short-external-cavity 1.3 μm InGaAsP semiconductor diode lasers

✍ Scribed by Hayward, J.E.; Cassidy, D.T.


Book ID
117867780
Publisher
IEEE
Year
1994
Tongue
English
Weight
876 KB
Volume
30
Category
Article
ISSN
0018-9197

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We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.