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8-band k.p theory of the material gain of strained tetrahedral semiconductors: application to 1.3 μm-InGaAsP lasers subject to additional external uniaxial stress

✍ Scribed by Enders, P.; Muller, R.; Klehr, A.; Gundlach, H.


Book ID
114455588
Publisher
The Institution of Electrical Engineers
Year
1996
Tongue
English
Weight
574 KB
Volume
143
Category
Article
ISSN
1350-2433

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