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Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-μm InGaAsP-InP multiple-quantum-well lasers

✍ Scribed by Belenky, G.; Reynolds, C.L., Jr.; Shterengas, L.; Hybertsen, M.S.; Donetsky, D.V.; Shtengel, G.E.; Luryi, S.


Book ID
119788009
Publisher
IEEE
Year
2000
Tongue
English
Weight
63 KB
Volume
12
Category
Article
ISSN
1041-1135

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The Hydrostatic Pressure Dependence of t
✍ A. F. Phillips; S. J. Sweeney; A. R. Adams; P. J. A. Thijs 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 191 KB 👁 1 views

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.