✦ LIBER ✦

Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP-InP modulation-doped strained quantum-well lasers

✍ Scribed by Niwa, A.; Ohtoshi, T.; Uomi, K.; Nakahara, K.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

1.3-μm InGaAsP-InP n-type modulation-dop

✍ Nakahara, K.; Uomi, K.; Tsuchiya, T.; Niwa, A.; Haga, T.; Taniwatari, T. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 148 KB

Reduced turn-on delay time in 1.3-μm InG

✍ Nakahara, K.; Uomi, K.; Haga, T.; Taniwatari, T.; Oishi, A. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 215 KB

1.3-μm n-type modulation-doped AlGaInAs/

✍ Po-Hsun Lei; Chia-Chien Lin; Wen-Jeng Ho; Meng-Chyi Wu; Lih-Wen Laih 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 281 KB

Small turn-on delay time in 1.3 mu m InA

✍ Fukushima, T.; Kasukawa, A.; Iwase, M.; Namegaya, T.; Shibata, M. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 277 KB

Well-thickness dependence of high-temper

✍ Ishikawa, T.; Higashi, T.; Uchida, T.; Yamamoto, T.; Fujii, T.; Shoji, H.; Kobay 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 54 KB

Effect of p-doping on the temperature de

✍ Belenky, G.; Reynolds, C.L., Jr.; Shterengas, L.; Hybertsen, M.S.; Donetsky, D.V 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 63 KB