Reduced turn-on delay time in 1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers with a buried heterostructure

✍ Scribed by Nakahara, K.; Uomi, K.; Haga, T.; Taniwatari, T.; Oishi, A.

• Book ID: 119785672
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 215 KB
• Volume: 8
• Category: Article
• ISSN: 1041-1135
• DOI: 10.1109/68.536633