Spatially and polarization resolved electroluminescence of 13-μm InGaAsP semiconductor diode lasers
✍ Scribed by Peters, Frank H. ;Cassidy, Daniel T.
- Book ID
- 115340369
- Publisher
- The Optical Society
- Year
- 1989
- Tongue
- English
- Weight
- 923 KB
- Volume
- 28
- Category
- Article
- ISSN
- 1559-128X
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📜 SIMILAR VOLUMES
We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.
This study concerns InGaAsP laser diodes with ptype substrates and with leak currents that can be ignored at room temperature. We investigate the radiative recombination coefficient and the Auger recombination coefficient based on the delay time of laser oscillation from the pulse current applied to