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Design and fabrication of low-threshold 1.55-μm graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes

✍ Scribed by Yamamoto, N.; Yokoyama, K.; Yamanaka, T.; Yamamoto, M.


Book ID
117868610
Publisher
IEEE
Year
1997
Tongue
English
Weight
179 KB
Volume
33
Category
Article
ISSN
0018-9197

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