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Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

✍ Scribed by Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Thomas, Bernd

Book ID
122757981
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
930 KB
Volume
381
Category
Article
ISSN
0022-0248

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Homoepitaxial Growth on a 4H-SiC C-Face
Homoepitaxial Growth on a 4H-SiC C-Face Substrate
✍ K. Kojima; S. Kuroda; H. Okumura; K. Arai 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 408 KB

## Abstract Homoepitaxial growth on a 4H‐SiC carbon face (C‐face) was investigated. The C‐face showed a similar site‐competition phenomenon to that seen on a 4H‐SiC Si‐face. This site‐competition phenomenon was distinctly sensitive to growth pressure. The surface morphology of the C‐face epitaxial