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Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

✍ Scribed by Bishop, S.M.; Preble, Edward A.; Hallin, Christer; Henry, Anne; Storasta, L.; Jacobsson, Henrik; Wagner, B.P.; Reitmeier, Z.J.; Janzén, Erik; Davis, Robert F.

Book ID
121082169
Publisher
Trans Tech Publications, Ltd.
Year
2004
Tongue
English
Weight
189 KB
Volume
457-460
Category
Article
ISSN
1662-9752

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Growth of AlN bulk single crystals on 4H
Growth of AlN bulk single crystals on 4H-SiC substrates and analyses of their structural quality and growth mode evolution
✍ Sumathi, R. R. ;Barz, R. U. ;Gigler, A. M. ;Straubinger, T. ;Gille, P. 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 303 KB

## Abstract Aluminium nitride (AlN) bulk single crystals were grown on off‐oriented 4H‐SiC substrates by the sublimation method. High‐quality crystals with about 25 mm in diameter and up to 5 mm in thickness were obtained with an optimized growth process. The crystals show hexagonal symmetry with w