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4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions

โœ Scribed by Kallinger, Birgit; Thomas, Bernd; Berwian, Patrick; Friedrich, Jochen; Trachta, Gerd; Weber, Arnd Dietrich


Book ID
121219143
Publisher
Trans Tech Publications, Ltd.
Year
2011
Tongue
English
Weight
437 KB
Volume
679-680
Category
Article
ISSN
1662-9752

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Homoepitaxial Growth on a 4H-SiC C-Face
โœ K. Kojima; S. Kuroda; H. Okumura; K. Arai ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 408 KB

## Abstract Homoepitaxial growth on a 4Hโ€SiC carbon face (Cโ€face) was investigated. The Cโ€face showed a similar siteโ€competition phenomenon to that seen on a 4Hโ€SiC Siโ€face. This siteโ€competition phenomenon was distinctly sensitive to growth pressure. The surface morphology of the Cโ€face epitaxial