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Homoepitaxial Growth on a 4H-SiC C-Face Substrate

✍ Scribed by K. Kojima; S. Kuroda; H. Okumura; K. Arai

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
408 KB
Volume
12
Category
Article
ISSN
0948-1907

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✦ Synopsis

Abstract

Homoepitaxial growth on a 4H‐SiC carbon face (C‐face) was investigated. The C‐face showed a similar site‐competition phenomenon to that seen on a 4H‐SiC Si‐face. This site‐competition phenomenon was distinctly sensitive to growth pressure. The surface morphology of the C‐face epitaxial layer was sensitive to surface imperfections on the substrate. The growth window of 4° off‐axis, C‐face substrates was shown to be wider than that of the corresponding Si‐face. A specular surface morphology without a bunched step structure was obtained over a whole 2 inch C‐face substrate with a vicinal off‐angle of 0.5°.

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