MOCVD Growth of ZnO on Different Substrate Materials
β Scribed by Th. Gruber; C. Kirchner; A. Waag
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 78 KB
- Volume
- 229
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
In this paper we report on the metal-organic chemical vapour deposition of ZnO layers. We focus on heteroepitaxial growth on c-plane Al 2 O 3 and the influence of the VI/II ratio during growth on the properties of the layers. The layer quality has been investigated by HRXRD, PL and reflectivity meas
GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality