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Static and low frequency noise characterization of surface- and buried-mode 0.1 μm P and N MOSFETs

✍ Scribed by M Fadlallah; G Ghibaudo; J Jomaah; M Zoaeter; G Guegan


Book ID
108361881
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
393 KB
Volume
42
Category
Article
ISSN
0026-2714

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## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t