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Impact of forward and reverse deep n-well biasing on the 1/f noise of 0.13 μm n-channel MOSFETs in triple well technology

✍ Scribed by Lih Chieh Png; Kok Wai Chew; Kiat Seng Yeo


Book ID
108271732
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
687 KB
Volume
53
Category
Article
ISSN
0038-1101

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