𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS

✍ Scribed by F. Esaka; H. Yamamoto; H. Udono; N. Matsubayashi; K. Yamaguchi; S. Shamoto; M. Magara; T. Kimura


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
392 KB
Volume
257
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Surface characterization of homoepitaxia
✍ F. Esaka; H. Yamamoto; H. Udono; N. Matsubayashi; K. Yamaguchi; S. Shamoto; M. M 📂 Article 📅 2011 🏛 Elsevier 🌐 English ⚖ 283 KB

Surface characterization of a homoepitaxial -FeSi 2 film grown on a -FeSi 2 single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crysta

Optical properties of single-phase β-FeS
✍ Daoren Gong; Dongsheng Li; Zhizhong Yuan; Minghua Wang; Deren Yang 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 140 KB

Single-phase semiconducting iron disilicide (b-FeSi 2 ) films on silicon substrate were fabricated by electron beam evaporation (EBE) technique. For preventing the oxidation of Fe film, silicon/iron/silicon sandwich structure films with different thickness of silicon and iron were deposited and then

Infrared and electrical properties of th
✍ K. Lefki; P. Muret; N. Cherief; E. Bustarret; T.T.A. Nguyen; N. Boutarek; R. Mad 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 273 KB

The orthorhombic phase of iron silicide, P-F&i,, is a semiconducting material whose preparation is compatible with silicon processes. Epitaxy on Si has been achieved recently [I]. Its direct gap of 0.85 eV seems to make it suitable