Surface characterization of homoepitaxial - FeSi2 film on - FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy

✍ Scribed by F. Esaka; H. Yamamoto; H. Udono; N. Matsubayashi; K. Yamaguchi; S. Shamoto; M. Magara; T. Kimura

• Publisher: Elsevier
• Year: 2011
• Tongue: English
• Weight: 283 KB
• Volume: 11
• Category: Article
• ISSN: 1875-3892
• DOI: 10.1016/j.phpro.2011.01.043

✦ Synopsis

Surface characterization of a homoepitaxial -FeSi 2 film grown on a -FeSi 2 single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial -FeSi 2 film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality.