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Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

✍ Scribed by Daoren Gong; Dongsheng Li; Zhizhong Yuan; Minghua Wang; Deren Yang


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
140 KB
Volume
254
Category
Article
ISSN
0169-4332

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✦ Synopsis


Single-phase semiconducting iron disilicide (b-FeSi 2 ) films on silicon substrate were fabricated by electron beam evaporation (EBE) technique. For preventing the oxidation of Fe film, silicon/iron/silicon sandwich structure films with different thickness of silicon and iron were deposited and then annealed at different temperatures. X-ray diffraction (XRD), Raman and Fourier transform infrared spectroscopy (FTIR) measurements were carried out to study the phase distribution and crystal quality of the films. Single-phase b-FeSi 2 with high crystal quality was achieved after annealing at 800 8C for 5 h. An apparent direct bandgap E g of approximately 0.85-0.88 eV was observed in the b-FeSi 2 films. It is considered that the silicon/iron/silicon sandwich structure is suited for formation of single-phase b-FeSi 2 with high crystal quality.


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