Infrared and electrical properties of thin films and junctions of β-FeSi2

✍ Scribed by K. Lefki; P. Muret; N. Cherief; E. Bustarret; T.T.A. Nguyen; N. Boutarek; R. Madar; J. Chevrier; J. Derrien; M. Brunel

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 273 KB
• Volume: 33
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(92)80231-q

✦ Synopsis

The orthorhombic phase of iron silicide, P-F&i,, is a semiconducting material whose preparation is compatible with silicon processes.

Epitaxy on Si has been achieved recently [I]. Its direct gap of 0.85 eV seems to make it suitable