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Co-evaporated thin films of semiconducting β-FeSi2

✍ Scribed by M. Powalla; K. Herz


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
606 KB
Volume
65-66
Category
Article
ISSN
0169-4332

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Single-phase semiconducting iron disilicide (b-FeSi 2 ) films on silicon substrate were fabricated by electron beam evaporation (EBE) technique. For preventing the oxidation of Fe film, silicon/iron/silicon sandwich structure films with different thickness of silicon and iron were deposited and then