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Spectroellipsometry characterization of directly bonded silicon-on-insulator structures

โœ Scribed by M.E. El-Ghazzawi; T. Saitoh; N. Hori; A. Sakai; T. Oka

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
374 KB
Volume
233
Category
Article
ISSN
0040-6090

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## 1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N รท ions at a dose of 7.5ร—1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed

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The wide applicability of spectroscopic ellipsometry (S/z) to characterize non-destructively silicon-on-insulator materials is illustrated with a number of case studies. SE allows the determination of not only the optical properties of single layers as a fimction of the wavelength but also their thi