β Scribed by J. Vanhellemont; H.E. Maes
No coin nor oath required. For personal study only.
The wide applicability of spectroscopic ellipsometry (S/z) to characterize non-destructively silicon-on-insulator materials is illustrated with a number of case studies. SE allows the determination of not only the optical properties of single layers as a fimction of the wavelength but also their thickness with great accuracy. When reliable reference values for the complex refractive indices of the components of a multilayer system are available,, information on layer thicknesses, inteO'ace roughness and even composition of mixed layers can be obtained with remarkable accuracy. In such cases SE can act as a one-dimensional optical high resolution microscope and even to some extent as an optical "Ruthe~,brd backscattering spectrometer".
π SIMILAR VOLUMES
## 1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N Γ· ions at a dose of 7.5Γ1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed