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Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry: F Ferrieu et al, J appl Phys, 62, 1987, 3458–3461


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
148 KB
Volume
39
Category
Article
ISSN
0042-207X

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