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Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system

✍ Scribed by A. N. Alekseev; A. É. Byrnaz; D. M. Krasovitsky; M. V. Pavlenko; S. I. Petrov; Yu. V. Pogorel’sky; I. A. Sokolov; M. A. Sokolov; M. V. Stepanov; A. P. Shkurko; V. P. Chalyi

Book ID
111443860
Publisher
Springer
Year
2007
Tongue
English
Weight
267 KB
Volume
41
Category
Article
ISSN
1063-7826

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Strain-relaxation in NH3-source molecula
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✍ Koyama, T. ;Sugawara, M. ;Uchinuma, Y. ;Kaeding, J. F. ;Sharma, R. ;Onuma, T. ;N 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 228 KB

## Abstract Temporal evolution of surface morphology in AlN epilayers grown by NH~3~‐source molecular beam epitaxy on the GaN/(0001) Al~2~O~3~ epitaxial templates was correlated with changes in the degree of the residual strain and the layer thickness. They began to crack for the thickness as thin