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Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy

✍ Scribed by Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo


Book ID
111961450
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
442 KB
Volume
81
Category
Article
ISSN
0003-6951

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## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between