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Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

✍ Scribed by Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.; Cusco, R.; Artus, L.; Novikov, S. V.; Foxon, C. T.; Calleja, E.


Book ID
111961459
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
519 KB
Volume
104
Category
Article
ISSN
0021-8979

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Strain relaxation in AlN/GaN heterostruc
✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between