Single electron transistor fabricated with SOI wafer
β Scribed by S. Kobayashi; M. Imaeda; S. Matsumoto
- Book ID
- 108215968
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 247 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0928-4931
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We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia
In this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels