𝔖 Bobbio Scriptorium
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Single-electron device simulation

✍ Scribed by Scholze, A.; Schenk, A.; Fichtner, W.

Book ID
114538286
Publisher
IEEE
Year
2000
Tongue
English
Weight
674 KB
Volume
47
Category
Article
ISSN
0018-9383

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We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single-electro

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Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert