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Single crystal titanium carbide, epitaxially grown on zincblend and wurtzite structures of silicon carbide

✍ Scribed by Q.H. Zhao; J.D. Parsons; H.S. Chen; A.K. Chaddha; J. Wu; G.B. Kruaval; D. Downham


Book ID
113189173
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
591 KB
Volume
30
Category
Article
ISSN
0025-5408

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The interfacial reaction and phase formation as a function of the annealing temperature (600-10008C) and time were investigated on both titanium and nickel thin films evaporated on n-type 6H-SiC (0001) substrate. The study was carried out employing a combination of Rutherford backscattering spectrom