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Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy

✍ Scribed by N. S. Savkina; V. V. Ratnikov; A. Yu. Rogachev; V. B. Shuman; A. S. Tregubova; A. A. Volkova

Book ID
110131712
Publisher
Springer
Year
2002
Tongue
English
Weight
158 KB
Volume
36
Category
Article
ISSN
1063-7826

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