SIMULATION OF AMORPHOUS SILICON THIN-FIL
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YAO-TSUNG TSAI; LI-CHUNG HUANG
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Article
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1997
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John Wiley and Sons
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English
β 157 KB
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This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemente