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Simulation of the amorphous silicon static induction transistor

✍ Scribed by M. Kemp; M. Meunier; C.G. Tannous

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
861 KB
Volume
32
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

SIMULATION OF AMORPHOUS SILICON THIN-FIL
SIMULATION OF AMORPHOUS SILICON THIN-FILM TRANSISTOR INCLUDING ADAPTED GUMMEL METHOD
✍ YAO-TSUNG TSAI; LI-CHUNG HUANG πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 157 KB πŸ‘ 2 views

This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemente