SIMULATION OF AMORPHOUS SILICON THIN-FILM TRANSISTOR INCLUDING ADAPTED GUMMEL METHOD

✍ Scribed by YAO-TSUNG TSAI; LI-CHUNG HUANG

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 157 KB
• Volume: 10
• Category: Article
• ISSN: 0894-3370
• DOI: 10.1002/(sici)1099-1204(199701)10:1<3::aid-jnm253>3.0.co;2-#

✦ Synopsis

This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs.